Search results for "Integrated circuits"

showing 10 items of 15 documents

Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions

2019

The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under &gamma

02 engineering and technologyHardware_PERFORMANCEANDRELIABILITYgammasäteily7. Clean energy01 natural sciencesanalog single-event transient (ASET)Ionizationsingle-event effects (SEE)0202 electrical engineering electronic engineering information engineeringAnnan elektroteknik och elektronikElectronic circuitPhysicsprotonsSubthreshold conductionionisoiva säteilyröntgensäteilyGamma raygamma-raysHardware and ArchitectureAtomic physicsVoltage referencemikroelektroniikkaprotonitComputer Networks and Communicationslcsh:TK7800-8360voltage referenceIonheavy-ions0103 physical sciencesionizationradiation hardening by design (RHBD)X-raysHardware_INTEGRATEDCIRCUITSMicroelectronicsElectrical and Electronic Engineeringhiukkassäteilybandgap voltage reference (BGR)Other Electrical Engineering Electronic Engineering Information Engineering010308 nuclear & particles physicsbusiness.industry020208 electrical & electronic engineeringlcsh:Electronicsspace electronicstotal ionization dose (TID)Analog single-event transient (ASET); Bandgap voltage reference (BGR); CMOS analog integrated circuits; Gamma-rays; Heavy-ions; Ionization; Protons; Radiation hardening by design (RHBD); Reference circuits; Single-event effects (SEE); Space electronics; Total ionization dose (TID); Voltage reference; X-raysmikropiiritsäteilyfysiikkaControl and Systems Engineeringreference circuitsSignal ProcessingbusinessSpace environmentHardware_LOGICDESIGNCMOS analog integrated circuits
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The promise of spintronics for unconventional computing

2021

Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/o…

Computer scienceFOS: Physical sciencesApplied Physics (physics.app-ph)02 engineering and technology01 natural sciencesQuantum nonlocalityAffordable and Clean EnergyBlueprintMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencescond-mat.mes-hallElectronic engineeringHardware_ARITHMETICANDLOGICSTRUCTURESStandby powerApplied Physics010302 applied physicsSpintronicsCondensed Matter - Mesoscale and Nanoscale PhysicsMechanical EngineeringReservoir computingPhysics - Applied PhysicsMaterials EngineeringPhysik (inkl. Astronomie)Dissipation021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCMOS integrated circuits; Computation theory; Energy dissipation; Green computing; Spin fluctuations; Spintronics; Tunnel junctionsCMOS0210 nano-technologyUnconventional computingphysics.app-ph
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Quasi-digital conversion for resistive devices: application in GMR-based IC current sensors

2013

Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-tofrequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology …

EngineeringElectric current measurementAnalog IC; Current measurement; GMR sensor; Oscillator; Resistance-to-frequency converter; Hardware and Architecture; Electrical and Electronic EngineeringOscillators (electronic)Noise (electronics)Electron devices:Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors [Àrees temàtiques de la UPC]Polychlorinated biphenylsMicrosystemElectronic engineeringOscillatorDigital conversionElectrical and Electronic EngineeringGMR sensorResistive touchscreenbusiness.industrySensorsElectrical engineeringElectromagnetisme -- MesuramentsAnalog ICResistance-to-frequency converterCMOS integrated circuitsCurrent measurementCMOSHardware and ArchitectureElectromagnetic measurementsvisual_artElectronic componentvisual_art.visual_art_mediumCurrent (fluid)business
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Magnetic Tunnel Junction (MTJ) Sensors for Integrated Circuits (IC) Electric Current Measurement

2013

We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.

Engineeringbusiness.industryElectrical engineeringGMRMagnetic tunnellingIntegrated circuitsensorslaw.inventionelectrical current sensingHigh impedanceTunnel magnetoresistanceElectrical currentlawElectric currentbusinessElectrical impedanceSensitivity (electronics)GMR; MTJ; integrated circuits; electrical current sensing; sensorsintegrated circuitsMTJ
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Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

2011

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm 2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster. © 2011 Optical Society of America.

FabricationComputer sciencePacket networksPhosphinesIntegrationIndium phosphideIndiumSemiconductor laser theoryFootprint (electronics)chemistry.chemical_compoundDiscrete componentsSpectral amplitudeComputer Communication NetworksTEORIA DE LA SEÑAL Y COMUNICACIONESMonolithically integratedOptical labelsOptical amplifierSignal processingbusiness.industryExperimental characterizationInPOptical DevicesSignal Processing Computer-AssistedEquipment DesignChipIntegration schemeAtomic and Molecular Physics and OpticsOptical packet networksEquipment Failure Analysischemistryvisual_artElectronic componentvisual_art.visual_art_mediumIndium phosphideOptoelectronicsMonolithic integrated circuitsbusinessLabel swapping
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Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology

2014

In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…

ModulationResistive sensorsEngineeringWheatstone bridgebusiness.industryElectrical engineeringControl and Systems Engineering; Electrical and Electronic EngineeringIntegrated circuitsGiant magnetoresistance:Enginyeria electrònica::Microelectrònica::Circuits integrats [Àrees temàtiques de la UPC]Integrated circuitInterfacelaw.inventionPrinted circuit boardCMOSControl and Systems EngineeringlawInterfacingLow-power electronicsLow-powerCircuits integratsElectrical and Electronic EngineeringElectric currentbusinessIET Circuits, Devices & Systems
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A Portable Readout System for Microstrip Silicon Sensors (ALIBAVA)

2009

A readout system for microstrip silicon sensors has been developed. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part a…

Nuclear and High Energy PhysicsEngineeringanalog processing circuitsMotherboardPhysics::Instrumentation and DetectorsInterface (computing)Analog-digital conversionFPGAshigh energy physics instrumentationUSBMicrostripChargelaw.inventionCharge sensitive amplifiersData acquisitionmicroprocessorslawlogic designElectrical and Electronic Engineeringdetector instrumentationtime to digitalbusiness.industryReading (computer)electronicsDetectorElectrical engineeringConvertersCollectionsfront-end electronicssemiconductor detectorsNuclear Energy and Engineeringdata acquisition systemsdigital integrated circuitsbusinessDaughterboard
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MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade

2018

Radiation hard silicon sensors are required for the upgrade of the ATLAS tracking detector for the High- Luminosity Large Hadron Collider (HL-LHC) at CERN. A process modification in a standard 0.18 μm CMOS imaging technology combines small, low-capacitance electrodes (∼2 fF for the sensor) with a fully depleted active sensor volume. This results in a radiation hardness promising to meet the requirements of the ATLAS ITk outer pixel layers (1.5 × 1015 neq /cm2 ), and allows to achieve a high signal-to-noise ratio and fast signal response, as required by the HL-LHC 25 ns bunch crossing structure. The radiation hardness of the charge collection to Non-Ionizing Energy Loss (NIEL) has been previ…

PhysicsActive pixel sensors ; CMOS integrated circuits ; position sensitive particle detectors ; radiation effects ; radiation hardening (electronics) ; semiconductor detectors ; solid state circuit designPixelPhysics::Instrumentation and Detectors010308 nuclear & particles physicsbusiness.industryDetectorHigh Luminosity Large Hadron Collider01 natural sciencesCapacitance030218 nuclear medicine & medical imagingSemiconductor detector03 medical and health sciences0302 clinical medicineCMOSNuclear electronics0103 physical sciencesbusinessRadiation hardeningComputer hardware
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Design of MOS Current Mode Logic Gates – Computing the Limits of Voltage Swing and Bias Current

2005

Minimizing a quality metric for an MCML gate, such as power-delay product or energy-delay product, requires solving a system of nonlinear equations subject to constraints on both bias current and voltage swing. In this paper, we will show that the limits of the swing and the bias current are affected by the constraints on maximum area and maximum delay. Moreover, methods for computing such limits are presented.

Power–delay productEmitter coupled logic circuitsBiasingSwingCMOS integrated circuitsComputer Science::Hardware Architecturemode logicComputer Science::Emerging TechnologiesLogic synthesisParasitic capacitanceControl theoryLogic gateHardware_INTEGRATEDCIRCUITSCurrent-mode logicHardware_LOGICDESIGNVoltageMathematics2005 IEEE International Symposium on Circuits and Systems
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Complex quantum state generation and coherent control based on integrated frequency combs

2019

The investigation of integrated frequency comb sources characterized by equidistant spectral modes was initially driven by considerations towards classical applications, seeking a more practical and miniaturized way to generate stable broadband sources of light. Recently, in the context of scaling the complexity of optical quantum circuits, these on-chip approaches have provided a new framework to address the challenges associated with non-classical state generation and manipulation. For example, multi-photon and high-dimensional states were to date either inaccessible, lacked scalability, or were difficult to manipulate, requiring elaborate approaches. The emerging field of quantum frequen…

Quantum opticsPhotonbusiness.industryComputer sciencePhysics::OpticsNanophotonics Photonic integrated circuits Quantum entanglement Spontaneous emissionSettore ING-INF/02 - Campi Elettromagnetici02 engineering and technologyQuantum entanglementSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsFrequency combQC350020210 optoelectronics & photonicsCoherent controlQuantum state0202 electrical engineering electronic engineering information engineeringElectronic engineeringCoherent statesPhotonicsbusiness
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